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Lexar NM620 1 TB (MAP1202 + Micron B58R)

1 TB
Capacity
MAP1202A-F1C
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

SSD Controller
Controller
NAND Die
NAND Die
The Lexar NM620 is a solid-state drive in the M.2 2280 form factor, launched in 2025. It is only available in the 1 TB capacity listed on this page. With the rest of the system, the Lexar NM620 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the MAP1202A-F1C Cougar from MaxioTech, a DRAM cache is not available. Lexar has installed 232-layer TLC NAND flash on the NM620, the flash chips are made by Micron. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. The NM620 is rated for sequential read speeds of up to 3,300 MB/s and 3,000 MB/s write; random IO reaches 300K IOPS for read and 256K for writes.
At its launch, the SSD was priced at 160 USD. The warranty length is set to five years, which is an excellent warranty period. Lexar guarantees an endurance rating of 500 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 1 TB (1024 GB)
Hardware Versions:
Overprovisioning: 70.3 GB / 7.4 %
Production: Active
Released: 2025
Price at Launch: 160 USD
Part Number: LNM620X001T
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: MaxioTech
Name:
MAP1202A-F1C Cougar
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Architecture: ARM Cortex-R5
Core Count: Dual-Core
Foundry: TSMC
Process: 22 nm
Flash Channels: 4 @ 1,600 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Micron
Name: B58R FortisFlash
Type: TLC
Technology: 232-layer
Speed: 2400 MT/s
Capacity: 4 chips @ 2 Tbit
ONFI: 5.0
Topology: Replacement Gate
Die Size: 70 mm²
(14.6 Gbit/mm²)
Dies per Chip: 2 dies @ 1 Tbit
Planes per Die: 6
Decks per Die: 2
Word Lines: 255 per NAND String
91.0% Vertical Efficiency
Read Time (tR): 61 µs
Program Time (tProg): 600 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 1574 MB/s
Die Write Speed: 160 MB/s
Endurance:
(up to)
3000 P/E Cycles
Page Size: 16 KB
Block Size: 2784 Pages
Plane Size: 3402 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 3,300 MB/s
Sequential Write: 3,000 MB/s
Random Read: 300,000 IOPS
Random Write: 256,000 IOPS
Endurance: 500 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

NAND Die:

2-Deck design with 116 word line per deck
Upper deck: 128-Gates
Lower Deck: 127-gates
Programming Throughput - not confirmed, calculated by estimated tPROG
tPROG - Estimated, not confirmed

Jun 17th, 2025 20:15 EEST change timezone

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